AOT4N60/AOTF4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOT4N60 & AOTF4N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R DS(on) , C iss and C rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V DS
I D (at V GS =10V)
R DS(ON) (at V GS =10V)
100% UIS Tested
700V@150 ℃
4A
< 2.2 ?
100% R g Tested
For Halogen Free add "L" suffix to part number:
AOT4N60L & AOTF4N60L
TO-220
Top View
TO-220F
D
G
D
S
AOT4N60
G
D
S
AOTF4N60
G
S
Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
AOT4N60
600
±30
AOTF4N60
Units
V
V
Continuous Drain
Current
T C =25°C
T C =100°C
I D
4
2.7
4*
2.7*
A
Pulsed Drain Current C
I DM
16
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
I AR
E AR
E AS
dv/dt
2.5
94
188
50
5
A
mJ
mJ
V/ns
Power Dissipation B
T C =25°C
Derate above 25 o C
P D
104
0.83
35
0.28
W
W/ o C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T J , T STG
T L
-55 to 150
300
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
R θ JA
R θ CS
R θ JC
AOT4N60
65
0.5
1.2
AOTF4N60
65
--
3.6
Units
°C/W
°C/W
°C/W
* Drain current limited by maximum junction temperature.
Rev.10.0: October 2013
www.aosmd.com
Page 1 of 6
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相关代理商/技术参数
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